This paper discusses the results of an extensive experimental study of the high-frequency characteristics of several commercial (GaAl)As injection lasers. The dye laser injection intensity was 2 MW Icm2 with a spectral tinewidth ofO.COS nrn. Technol. Sci. This mode hopping occurs in all injection lasers and is due to increase in temperature. Bakhert, P. G. Eliseev & Z. Raab Journal of Applied Spectroscopy volume 16, pages 598 – 600 (1972)Cite this article CONFERENCE PROCEEDINGS Papers Presentations Journals. The modulation bandwidth, modulation depth, 2HD, IMD3 and IMD5 are evaluated for various tunnel injection ratio. The below diagram is a graphical plot between output optical power on y-axis and the current input to the laser diode on x-axis. It is similar to a transistor and has the operation like LED but the output beam has the characteristics of laser light. Since the semiconductor laser has unique features of high gain, low facet reflectivity, and amplitude-phase coupling through the \(\alpha \) parameter, it is also sensitive to optical injection from a different laser. A laser diode, (LD), injection laser diode (ILD), or diode laser is a semiconductor device similar to a light-emitting diode in which a diode pumped directly with electrical current can create lasing conditions at the diode's junction. 14 118 View the article online for updates and enhancements. Advanced Photonics Journal of Applied Remote Sensing Injection laser dye FIG.!. Related content Control of the emission wavelength of self-organizedInGaAs quantum dots:main achievements and present status A E Zhukov, V M Ustinov, A R Kovsh et al.- Also see diode.. A laser diode, also known as an injection laser or diode laser, is a semiconductor device that produces coherent radiation (in which the waves are all at the same frequency and phase) in the visible or infrared (IR) spectrum when current passes through it. Abstract. Semiconductor Laser application examples. The switching characteristics of a bistable injection laser with very large hysteresis is examined. Laser Diode P-I Characteristics. The system of injection-locked master-slave lasers (MSLs) has been studied. Driven by voltage, the doped p-n-transition allows for recombination of an electron with a hole. This paper discusses the results of an extensive experimental study of the high-frequency characteristics of several commercial (GaAl)As injection lasers. The solutions to the rate equations describing the phase-locked state of MSLs have been given. It is possible to obtain fairly fast switching time (<20 ns) with a strong overdrive. Injection into the cavity of the Ti:sapphire laser is made through a polarizing prism located between a Ti:sapphire rod and a pockels cell. The tunnel injection factor is varied from 0 to 1. Output energies for the injection-controlled XeF(C~A) laser between 450 and 530 nrn showing a tuning bandwidth of 50 nm FWHM centered at 490 nm. Advanced Search >. : 3 Laser diodes can directly convert electrical energy into light. The linewidth (FWHM) of the flashlamp pumped Ti:sapphire laser injection seeded by the ECLD was about 0.55 pm consequently. Mode hopping alters characteristics of laser and results in kinks in characteristics of single mode device. 1 Dynamical Characteristics of Nano-Lasers Subject to Optical Injection and Phase Conjugate Feedback Hong Han1,2*, K. Alan Shore1 1 School of Electronic Engineering, Bangor University, Wales, LL57 1UT, UK 2 College of Physics and Optoelectronics, Key Laboratory of Advanced Transducers and Intelligent Control System, Ministry of Education, Taiyuan University of Technology, Taiyuan 030024, … As we increase the current flow to the laser diode, the optical power of output light gradually increases up to a certain threshold. This laser system is applied to observe the potassium layer in the mesopause region. All the lasers had a stripe or a mesastripe contact formed by chemical etching of the contact layer; the contact width was 10-14 microns, and the resonator length was 16-120 microns. Injection locking of a semiconductor laser can induce major changes in the modulation characteristics of the laser. It is also called Injection Laser. As is evident from Eqs. mination of the spectral characteristics of the master laser must first be undertaken in order to derive those of the slave laser. In this work, the effect of tunneling injection on the distortion characteristics of transistor laser is analyzed. Locking and unlocking phenomena in optically injected semiconductor lasers have been extensively studied. , , , the slave laser photon number S depends on the master–slave frequency detuning Δf. lasers have traditionally been rich and complex, making it difficult for the non-expert to determine correct laser design and locking conditions that will optimize their system. Home > Proceedings > Volume 2844 > Article > Proceedings > Volume 2844 > Article It is shown that when subject to optical injection and phase conjugate feedback, nano-lasers may exhibit remarkably stable small-amplitude oscillations with frequencies of order 300 GHz. In this paper, we attempt to explore the physical origin of many of the laser characteristics enhanced by optical injection locking. The spin transport along the c-axis is however reported by rather limited number of papers. For simplicity, the master laser is considered to be a one-section single-mode laser described by the same rate equations as the slave laser without optical injection… We fabricated and investigated the thermal characteristics of TO-CAN (transistor-outline-can) packaged long wavelength GaInAsP/InP Fabry-Perot laser diode. Measurements were made on GaAs-AlAs heterostructure injection lasers with double confinement and short plane-parallel resonators to determine their threshold, power, and spectral characteristics. Characteristic temperature of 55 K and peak wavelength shift of 0.4 nm/°C depending on the temperatures were obtained. A small signal analysis using the lumped-element model shows that both the frequency and damping of the characteristic resonances of the coupled complex field and free carriers (gain medium) are modified. The dynamics of nano-lasers has been analysed using rate equations which include the Purcell cavity-enhanced spontaneous emission factor F and the spontaneous emission coupling factor β. Mode hopping is not a continuous function of drive current but occurs above 1 to 2 mA. The system of injection-locked master-slave lasers (MSLs) has been studied. Characteristics of semiconductor injection laser with composite tunable resonator. The material which often used in semiconductor laser is the gallium Arsenide, therefore semiconductor laser is sometimes known as Gallium Arsenide Laser. Semiconductor Laser is used for a variety of applications by taking advantage of characteristics that include straightness, small emission spot size (several um), monochromaticity, high light density, and coherence. Using Lang's equation for the dynamics of injection locking of a laser diode, we show that the hysteresis property of the excess carrier density has direct influence on the mode-shift characteristics, which makes the shift of the slave laser mode to be different from the frequency detune of the external master laser signal within the locking range of the slave laser. Kh. Gain characteristics of quantum dot injection lasers To cite this article: A E Zhukov et al 1999 Semicond. An experimental and theoretical study of relative intensity noise (RIN) spectra of side-mode injection-locked Fabry–Perot semiconductor lasers is reported. The evolutions of the linewidth, power, and second-harmonic ratio of the generated microwave are investigated as a function of injection strength and frequency detuning. OSTI.GOV Journal Article: Radiative characteristics of injection lasers with short resonators Title: Radiative characteristics of injection lasers with short resonators Full Record The solutions to the rate equations describing the phase-locked state of MSLs have been given. Characteristics of microwave photonic signal generation based on the period-one dynamic in an optically injected vertical-cavity surface-emitting laser are studied systematically. It is shown that the injection-locking technique effectively increases the relaxation oscillation frequency from 4.5 GHz (free-running mode) to 12 GHz (injection-locked mode) and enhances relaxation peaks of the slave laser RIN spectra. Spin transport characteristics of graphene have been extensively studied so far. The wavelengths shown were chosen not Switch-on delays are shown to exhibit a "critical" part and a "noncritical" part, both of which can be reduced by increasing the overdrive current. 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